Low voltage, high-Q SOI MEMS varactors for RF applications

European Solid-State Circuits Conference

Volumn , Issue , 2003, Pages 607-610

  Yalçinkaya, Arda D ^a   Jensen, Søren ^a   Hansen, Ole ^a  

^a TECHNICAL UNIVERSITY OF DENMARK   (Denmark)

Author keywords

[No Author keywords available]

Indexed keywords

BAND PASS FILTERING; DEEP REACTIVE ION ETCHING; ELECTRICAL QUALITY FACTORS; HIGH-ASPECT RATIO; SINGLE CRYSTALLINE SILICON; TUNABLE CAPACITORS; ULTRA-HIGH FREQUENCY BANDS; VERY HIGH FREQUENCY;

ASPECT RATIO; CAPACITORS; CIRCUIT OSCILLATIONS;

MEMS;

EID: 50249136024     PISSN: 19308833     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSCIRC.2003.1257208     Document Type: Conference Paper

References (5)

1. R. L. Borwick III et al. "A high-Q, large tuning range, tunable capacitor for RF applications" IEEE Int. MEMS Conf. 2002, pp. 669-672 (2002).
2. A. Dec and K. Suyama "Micromachined etectro-mechanically tunable capacitors and their applications to RF IC's" IEEE Trans, on Microwave Theory and Tech-niques, 46, pp. 2587-2596 (1998).
3. R. L. Borwick III et al., "A high-Q, large tuning range, MEMS capacitor for RF filter systems" Sens, and Act. A, 103, pp. 33-41 (2003).
4. J. I. Seeger and S. B. Crary "Stabilization of electrostat-ically actuated mechanical device" Transducers 97, pp. 1133-1136, Chicago (1997).
5. H. Nieminen et al, "Microelectromechanical capacitor with wide tuning range" IEE Electonics Letters, 37, pp. 1451-1452(2001).