Full nyquist 4-bit ADC operating at half clock rate in InP-HBT technology

Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC

Volumn , Issue , 2004, Pages 39-42

  Mokhtari, Mehran ^a   Jensen, Joseph F ^a   Kaplan, Todd ^a   Fields, Charles ^a   McLaughlin, Douglas ^a   Ng, Willie ^a  

^a Hughes Aircraft Co   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DIVIDERS; HALF CLOCK RATES; INP WAFERS; SELECTORS;

BIT ERROR RATE; CURRENT DENSITY; ELECTRIC POTENTIAL; ELECTROOPTICAL DEVICES; RESISTORS; ROM; SIGNAL TO NOISE RATIO;

ANALOG TO DIGITAL CONVERSION;

EID: 21644479114     PISSN: 15508781     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/CSICS.2004.1392479     Document Type: Conference Paper

References (6)

1. W. E. Stanchina et. al. "An InP-Based HBT Fab for High-Speed Digital, Analog, Mixed-Signal and Optoelectronic ICs", GaAs IC Symposium 1995 proceedings, pp. 31-34.
2. Yoshito Nejime, Masao Hotta and Seiichi Ueda, "An 8-b ADC with Over-Nyquist Input at 300-Ms/s Conversion Rate", IEEE, J. Solid State Circuits, Vol 26. no. 9. Sep. 1991.
3. M. Hott, K. Maio, N.Yokozawa, and T. Watanabe "A 150mW 8-bit video frequency A/D converter" IEEE J. Solid State Circuits, Vol. SC-21. no. 2. pp. 318-323 Apr. 1986.
4. T. Wakimoto, Y. Akazawa and S. Konaka, "Si Bipolar 2-GHz 6-bit Flash A/D Conversion LSI", IEEE, J. Solid State Circuits, Vol. 23 no. 6. DEC. 1988.
5. V. E. Garuts, Y.C. Simon Yu, E. O. Traa and T. Yamaguchi, "A Dual 4-bit 2-Gs/s Füll Nyquist Analog-to-Digital Converter Using a 70-ps Silicon Bipolar Technology with Borosenic Poly Process and Coupling-Base Implant",IEEE,J. Solid State Circuits,Vol.24,No.2 Apr. 1989.
6. M.Mokhtari, J.F.Jensen, T.Kaplan, C.Fields, D.McLaughlin, and W.Ng, "4-bit Flash ADC in InP-HBT Technology, Using Distributed Resistor Ladder", Submitted to RF and Wireless Communication Conference 2004.