메뉴 건너뛰기




Volumn , Issue , 2006, Pages 146-148

Laser spike annealing: A novel post-porosity treatment for significant toughening of low-k organosilicates

Author keywords

[No Author keywords available]

Indexed keywords

CARBON CONTENTS; CHEMICAL COMPOSITIONS; CHEMICAL-; CONCOMITANT DECREASE; DIELECTRIC CONSTANTS; DWELL TIMES; HIGH TEMPERATURES; INFRA-RED; INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE; LASER THERMAL; METHYL GROUPS; METHYL SILSESQUIOXANE; ORGANOSILICATES; RBS ANALYSIS; RUTHERFORD BACK-SCATTERING; SHORT PERIODS; SPIKE ANNEALING;

EID: 50249102832     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IITC.2006.1648672     Document Type: Conference Paper
Times cited : (8)

References (9)
  • 2
    • 50249158124 scopus 로고    scopus 로고
    • W. Volksen et al, Porous Organosilicates for On-Chip Applications: Dielectric Generational Extendibility by the Introduction of Porosity, Springer Series in Advanced Microelectronics, 9:Low Dielectric Constant Materials for IC Applications, P. Ho (Ed.), Springer, Berlin, 2001.
    • W. Volksen et al, "Porous Organosilicates for On-Chip Applications: Dielectric Generational Extendibility by the Introduction of Porosity", Springer Series in Advanced Microelectronics, Vol. 9:Low Dielectric Constant Materials for IC Applications, P. Ho (Ed.), Springer, Berlin, 2001.
  • 3
    • 8644275608 scopus 로고    scopus 로고
    • The application of simultaneous e-beam cure method for 65nm node Cu/low-k technology with hybrid (PAE/MSX) structure
    • H. Miyajima, K. Fujita, R. Nakata, T. Yoda and N. Hayasaka, The application of simultaneous e-beam cure method for 65nm node Cu/low-k technology with hybrid (PAE/MSX) structure, Proc. oj IITC 2004, 222.
    • (2004) Proc. oj IITC , pp. 222
    • Miyajima, H.1    Fujita, K.2    Nakata, R.3    Yoda, T.4    Hayasaka, N.5
  • 5
    • 50249093903 scopus 로고    scopus 로고
    • US Patent 6,936,551, Methods and apparatus for e-beam treatment used to fabricate integrated circuit devices, issued Aug. 30, 2005
    • F. Moghadam, J. Zhao, T. Weidman, R.J. Roberts, L. Xia, A.T. Demos, US Patent 6,936,551, "Methods and apparatus for e-beam treatment used to fabricate integrated circuit devices", issued Aug. 30, 2005.
    • Moghadam, F.1    Zhao, J.2    Weidman, T.3    Roberts, R.J.4    Xia, L.5    Demos, A.T.6
  • 8
    • 2542479641 scopus 로고
    • Silicon oxycarbide glasses: Part II, Structure & Properties
    • CM. Renlund, S. Prochazka, R.H. Doremus, "Silicon oxycarbide glasses: Part II, Structure & Properties", J. Materials Research, 6[12], 2723 (1991).
    • (1991) J. Materials Research , vol.6 , Issue.12 , pp. 2723
    • Renlund, C.M.1    Prochazka, S.2    Doremus, R.H.3
  • 9
    • 0035497680 scopus 로고    scopus 로고
    • Mechanical Properties of Silicon Oxycarbide Ceramic Foams
    • P. Colombo, J.R. Hellman, D.L. Shelleman, "Mechanical Properties of Silicon Oxycarbide Ceramic Foams", JACS, 84[10], 2245 (2001).
    • (2001) JACS , vol.84 , Issue.10 , pp. 2245
    • Colombo, P.1    Hellman, J.R.2    Shelleman, D.L.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.