Etching rate, optical transmittance, and charge trapping characteristics of Al-rich Al2O3 thin film fabricated by rf magnetron cosputtering

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 26, Issue 4, 2008, Pages 1373-1378

  Nakata, Shunji ^a   Nagai, Shingo ^b   Kumeda, Minoru ^b   Kawae, Takeshi ^b   Morimoto, Akiharu ^b   Shimizu, Tatsuo ^b  

^a NTT CORPORATION   (Japan)

^b KANAZAWA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE TRAPPING; METALS; PLATE METAL; PLATING;

CHARGE TRAPPING CHARACTERISTICS; ETCHING RATES; METAL PLATES; OPTICAL TRANSMITTANCE; RADIO-FREQUENCY MAGNETRON;

ALUMINUM;

EID: 49749117142     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2953727     Document Type: Article

References (15)

1. Single Charge Tunneling, edited by, H. Grabert, and, M. H. Devoret, (Plenum, New York, 1992).
2. S. Nakata, Phys. Rev. B 0163-1829 10.1103/PhysRevB.47.1679 47, 1679 (R) (1993).
3. F. R. Libsch and M. H. White, Solid-State Electron. 0038-1101 10.1016/0038-1101(90)90017-9 33, 105 (1990).
4. C. H. Lee, K. I. Choi, M. K. Cho, Y. H. Song, K. C. Park, and K. Kim, Tech. Dig.-Int. Electron Devices Meet. 2003, 613. 0003-6951
5. C. H. Lee, K. C. Park, and K. Kim, Appl. Phys. Lett. 0003-6951 10.1063/1.2010607 87, 073510 (2005).
6. M. Specht, H. Reisinger, F. Hofmann, T. Schulz, E. Landgraf, R. J. Luyken, W. Rösner, M. Grieb, and L. Risch, Solid-State Electron. 0038-1101 10.1016/j.sse.2004.09.003 49, 716 (2005).
7. S. Nakata, K. Saito, and M. Shimada, Electron. Lett. 0013-5194 10.1049/el:20051419 41, 721 (2005).
8. S. Nakata, K. Saito, and M. Shimada, Appl. Phys. Lett. 0003-6951 10.1063/1.2137449 87, 223110 (2005).
9. S. Nakata, K. Saito, and M. Shimada, Jpn. J. Appl. Phys., Part 1 0021-4922 10.1143/JJAP.45.3176 45, 3176 (2006).
10. B. Park, K. Cho, B. M. Moon, and S. Kim, Microelectron. Eng. 84, 1627 (2007).
11. C. A. Foss, M. J. Tierney, and C. R. Martin, J. Phys. Chem. 0022-3654 10.1021/j100201a057 96, 9001 (1992).
12. C. A. Foss, G. L. Hornyak, J. A. Stockert, and C. R. Martin, J. Phys. Chem. 0022-3654 10.1021/j100062a037 98, 2963 (1994).
13. T. Sugizaki, M. Kobayashi, M. Ishidao, H. Minakata, M. Yamaguchi, Y. Tamura, Y. Sugiyama, T. Nakanishi, and H. Tanaka, Symposium on VLSI Technology, 2003, p. 27.
14. Y. Jin, K. Saito, M. Shimada, and T. Ono, J. Vac. Sci. Technol. B 1071-1023 10.1116/1.1565347 21, 942 (2003).
15. S. Minami and Y. Kamigaki, IEEE Trans. Electron Devices 0018-9383 10.1109/16.97417 38, 2519 (1991).