A 2kV ESD-protected 18GHz LNA with 4dB NF in 0.13μm CMOS

Digest of Technical Papers - IEEE International Solid-State Circuits Conference

Volumn 51, Issue , 2008, Pages 194-196

  Cao, Yiqun ^a   Issakov, Vadim ^b   Tiebout, Marc ^a  

^a INFINEON TECHNOLOGIES AG   (Germany)

^b UNIVERSITY OF PADERBORN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; ELECTROSTATIC DISCHARGE;

3 DB BANDWIDTH; BOND WIRE;

LOW NOISE AMPLIFIERS;

EID: 49549112937     PISSN: 01936530     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISSCC.2008.4523123     Document Type: Conference Paper

References (3)

1. Y. Mimino, M. Hirata, K. Nakamura, K. Sakamoto, Y. Aoki and S. Kuroda,"High Gain-Density K-Band P-HEMT LNA MMIC for LMDS and Satellite Communication," IEEE RFIC Symp., pp. 209-212, Jun. 2000.
2. M. J. Deen, C.-H. Chen, S. Asgaran, G. A. Rezvani, J. Tao and Y. Kiyota, "High-Frequency Noise of Modern MOSFETs: Compact Modeling and Measurement Issues," IEEE Trans. on Electron Devices, vol. 53, no. 9, pp. 2062-2081, Sept. 2006.
3. D. K. Shaeffer and T. H. Lee, "A 1.5-V, 1.5-GHz CMOS Low Noise Amplifier," IEEE J. Solid-State Circuits, vol. 32, no. 5, pp. 745-749, May 1997.