ELECTRODES;
HIGH ELECTRON MOBILITY TRANSISTORS;
INTEGRATED CIRCUIT LAYOUT;
RADIO FREQUENCY AMPLIFIERS;
SATELLITE COMMUNICATION SYSTEMS;
SEMICONDUCTING GALLIUM ARSENIDE;
SEMICONDUCTING INDIUM COMPOUNDS;
GAIN DENSITY;
LOCAL MULTIPOINT DISTRIBUTION SERVICE;
LOW NOISE AMPLIFIERS;
An X-, K.Band Low-Noise P-HEMT MMIC Amplifier with Minimized Chip-Size by Using Smart Biasing and Matching Circuits
Y. Mimino An X-, K.Band Low-Noise P-HEMT MMIC Amplifier with Minimized Chip-Size by Using Smart Biasing and Matching Circuits Asia-Pacific Microwave Conference Proc. 391 394 Asia-Pacific Microwave Conference Proc. 1998
Ka-Band Ultra Low Noise MMIC Amplifier Using Pseudomorphic HEMTs
S. Fujimoto Ka-Band Ultra Low Noise MMIC Amplifier Using Pseudomorphic HEMTs Digest of Technical Papers, 1997 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium Digest of Technical Papers, 1997 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium
Ultra Low Noise Q-band Monolithic Amplifiers Using InP- and GaAs-Based 0.1um HEMT Technologies
M. V. Aust Ultra Low Noise Q-band Monolithic Amplifiers Using InP-and GaAs-Based 0.1um HEMT Technologies Monolithic Circuits Symposium 1996 Digest of Papers Monolithic Circuits Symposium 1996 Digest of Papers
A technique for deriving noise-parameters of millimeter-wave low-noise HEMTs and its application to MMIC Ina design
H. Yoshinaga A technique for deriving noise-parameters of millimeter-wave low-noise HEMTs and its application to MMIC Ina design MMIC Symposium 149 152 MMIC Symposium 1996