High brightness GaN vertical light emitting diodes on metal alloyed substrate for general lighting application

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 4, Issue 1, 2007, Pages 17-20

  Chu, Chen Fu ^b   Cheng, Chao Chen ^b   Liu, Wen Huan ^b   Chu, Jiunn Yi ^b   Cheng, Hao Chun ^b   Fan, Feng Hsu ^b   Yen, Jui Kang ^b   Tran, Chuong Anh ^a   Doan, Trung ^a  

^a SemiLEDs Corp   (United States)

^b Semi Photonics   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

BLUE LASERS; CHIP SIZES; CONTINUOUS MODE; CURRENT-VOLTAGE; DYNAMIC RESISTANCE; EFFICIENCY LOSS; HEAT DISSIPATION; HIGH CURRENTS; HIGH-BRIGHTNESS; HIGH-THERMAL CONDUCTIVITY; INTERNATIONAL SYMPOSIUM; LIGHT-OUTPUT EFFICIENCY; MASS-PRODUCTION; PERFORMANCE DETERIORATION; SINGLE CHIPS; VERTICAL LIGHT-EMITTING DIODES;

DIODES; GALLIUM NITRIDE; LASERS; LIGHT EMISSION; LIGHT EMITTING DIODES; LIGHT SOURCES; LIGHTING; METALS; SEMICONDUCTING GALLIUM; SUBSTRATES; THERMOELECTRICITY;

GALLIUM ALLOYS;

EID: 49549112286     PISSN: 18626351     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssc.200673523     Document Type: Conference Paper

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