A Sub-1W to 2W low-power IA processor for mobile internet devices and ultra-mobile PCs in 45nm Hi-K metal gate CMOS

Digest of Technical Papers - IEEE International Solid-State Circuits Conference

Volumn 51, Issue , 2008, Pages

  Gerosa, Gianfranco ^a   Curtis, Steve ^a   D'Addeo, Mike ^a   Jiang, Bo ^a   Kuttanna, Belliappa ^a   Merchant, Feroze ^a   Patel, Binta ^a   Taufique, Mohammed ^a   Samarchi, Haytham ^a  

^a INTEL CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

INTERNATIONAL SOLID-STATE CIRCUITS CONFERENCE; LOW POWERS; METAL GATES; MOBILE INTERNET; MOBILE PCS;

METALS;

EID: 49549096253     PISSN: 01936530     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISSCC.2008.4523154     Document Type: Conference Paper

References (3)

1. K. Mistry, et al., "A 45nm Logic Technology with High-K+ Metal Gate Transistors, Strained Silicon, 9 Cu Interconnect Layers, 193nm Dry Patterning, and 100% Pb-free Packaging", Tech. Dig. IEDM, Dec. 2007.
2. V. George, et al., "PENRYN: 45-nm Next Generation Intel® Core™ 2 Processor", accepted to ASSCC Dig. Tech. Papers, Nov. 2007.
3. F. Hamzaoglu, et al., "A 153Mb SRAM Design with Dynamic Stability Enhancement and Leakage Reduction in 45nm Hi-K Metal Gate CMOS Technology", ISSCC Dig. Tech. Papers, pp. 376-377, Feb. 2008.