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Volumn , Issue , 2007, Pages 14-17

Penryn: 45-nm next generation Intel® Core™ 2 processor

Author keywords

[No Author keywords available]

Indexed keywords

L2 CACHE; MARKET SEGMENTS; MICRO ARCHITECTURES; SOLID-STATE CIRCUITS CONFERENCE;

EID: 51349166333     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ASSCC.2007.4425784     Document Type: Conference Paper
Times cited : (73)

References (4)
  • 1
    • 33846213489 scopus 로고    scopus 로고
    • S. Rusu, S. Tam, H. Muljono, D. Ayers, J. Chang, B. Cherkauer, J. Stinson, J. Benoit, R. Varada, J. Leung, R. Limaye, S. Vora A 65-nm Dual-Core Multi-Threaded Xeon™ Processor with 16MB L3 Cache, ISSCC, 2007
    • S. Rusu, S. Tam, H. Muljono, D. Ayers, J. Chang, B. Cherkauer, J. Stinson, J. Benoit, R. Varada, J. Leung, R. Limaye, S. Vora "A 65-nm Dual-Core Multi-Threaded Xeon™ Processor with 16MB L3 Cache", ISSCC, 2007
  • 2
    • 34548817260 scopus 로고    scopus 로고
    • The implementation of the 65nm Dual core 64b Merom Processor
    • Digest Section 5.6
    • N. Sakran, M. Yuffe, M. Mehalel, J. Doweck, E. Knoll, A. Kovacs, "The implementation of the 65nm Dual core 64b Merom Processor" ISSCC 2007 Digest Section 5.6
    • (2007) ISSCC
    • Sakran, N.1    Yuffe, M.2    Mehalel, M.3    Doweck, J.4    Knoll, E.5    Kovacs, A.6
  • 3
    • 4544226086 scopus 로고    scopus 로고
    • A SRAM Design on 65nm CMOS Technology with Integrated Leakage Reduction Scheme
    • Papers, pp, June
    • K. Zhang, et al., "A SRAM Design on 65nm CMOS Technology with Integrated Leakage Reduction Scheme," VLSI Circuit Symposium, Digest of Tech. Papers, pp. 294-295, June 2004.
    • (2004) VLSI Circuit Symposium, Digest of Tech , pp. 294-295
    • Zhang, K.1
  • 4
    • 51349100824 scopus 로고    scopus 로고
    • http://download.intel.com/technology/architecture/new-instructions-paper. pdf


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.