Effects of the sputtering time of ZnO buffer layer on the quality of GaN thin films

Applied Surface Science

Volumn 254, Issue 21, 2008, Pages 6766-6769

  Xue, Shoubin ^a   Zhang, Xing ^a   Huang, Ru ^a   Zhuang, Huizhao ^b  

^a PEKING UNIVERSITY   (China)

^b SHANDONG NORMAL UNIVERSITY   (China)

Author keywords

GaN films; Sputtering time; ZnO buffer layers

Indexed keywords

BUFFER LAYERS; CRYSTAL ATOMIC STRUCTURE; GALLIUM NITRIDE; II-VI SEMICONDUCTORS; III-V SEMICONDUCTORS; MAGNETRON SPUTTERING; OPTICAL PROPERTIES; OPTICAL WAVEGUIDES; THIN FILMS; X RAY DIFFRACTION; ZINC OXIDE;

ATOM FORCE MICROSCOPY (AFM); DIFFERENT THICKNESS; GAN FILM; GAN THIN FILMS; OXYGEN AMBIENT; RADIO-FREQUENCY MAGNETRON SPUTTERING SYSTEM; SPUTTERING TIME; ZNO BUFFER LAYER;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 49549085735     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2008.04.083     Document Type: Article

References (21)

1. Nakamura S., Senoh M., Nagahama S., Iwasa N., et al. Appl. Phys. Lett. 69 (1996) 3034
2. Morkoc H., Strite S., Gao G.B., Lin M.E., Sverdlov B., and Burns M. J. Appl. Phys. 76 (1994) 1363
3. Morkoc H., and Mohammed S.N. Science 267 (1995) 51
4. Bourret A., Barski A., Rouviere J.L., et al. Appl. Phys. Lett. 83 (1998) 2003
5. Detchprohm T., Hiramatsu K., et al. Appl. Phys. Lett. 61 22 (1992) 2688
6. Hersee S.D., Ramer J., Zheng K., Kranenberg C., Malloy K., Banas M., and Goorsky M. J. Electron. Mater. 24 (1995) 1519
7. Ishida M., Hashimoto T., Takayama T., Imafuji O., Yuri M., Yoshikawa A., Itoh K., Terakoshi Y., Sugino T., and Shirafuji J. Gallium Nitride and Related Materials II, in: Symp. Mater. Res. Soc. (1997) p69
8. Shulin G., Rong Z., Jingxi S., Ling Z., and Kuech T.F. Appl. Phys. Lett. 76 5 (2000) 23
9. Xue S., Zhuang H., Xue C., et al. EPJ-Appl. Phys. 36 (2006) 1
10. Zheng J.P., and Kwok H.S. Thin Solid Films 232 (1993) 99
11. Suzuki T., Harada C., Goto H., et al. Curr. Appl. Phys. 4 (2002) 643
12. Zhou S.Q., Vantomme A., Zhang B.S., Yang H., and Wu M.F. Appl. Phys. Lett. 86 (2005) 081912
13. Bae S.Y., Seo H.W., et al. Chem. Phys. Lett. 376 (2003) 445
14. Xiaojun M., and Zhijian Y. Chin. J. Semicond. 20 8 (1999) 639
15. Sun Y., and Miyasato T. J. Appl. Phys. 84 11 (1998) 6451
16. Xiaolong C., Jianye L., Yingge C., et al. Adv. Mater. 12 19 (2000) 1432
17. Shi W.S., Zheng Y.F., et al. Chem. Phys. Lett. 345 (2001) 377
18. Peng H.Y., Zhou X.T., Wang N., et al. Chem. Phys. Lett. 327 (2000) 263
19. Dongsheng L., Sumiy M., Fuke S., et al. J. Appl. Phys. 90 8 (2001) 4219
20. Elkashef N., Srinivasa R.S., and Major S. Thin Solid Films 333 (1998) 9
21. Amanullah F.M., Pratap K.J., and Hari Babu V. Mater. Sci. Eng. B 52 (1998) 93