Three technologies for a smart miniaturized gas-sensor: SOI CMOS, micromachining, and CNTs - Challenges and performance

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2007, Pages 831-834

  Udrea, F ^a   Maeng, S ^b   Gardner, J W ^c   Park, J ^b   Haque, M S ^a   Ali, S Z ^a   Choi, Y ^b   Guha, P K ^a   Vieira, S M C ^a   Kim, H Y ^b   Kim, S H ^b   Kim, K C ^b   Moon, S E ^b   Park, K H ^b   Milne, W I ^a   Oh, S Y ^b  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^b Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

^c UNIVERSITY OF WARWICK   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON NANOTUBES; CHEMICAL SENSORS; ELECTRON DEVICES; GAS DETECTORS; GASES; NANOTECHNOLOGY; NONMETALS; POLYSILICON; SENSORS; SILICON; SILICON WAFERS; TECHNOLOGY; TUNGSTEN;

FULL INTEGRATION; GAS SENSORS; MICRO-HOTPLATES; MULTI-WALLED CNT; ON CHIPS; PPB LEVELS; RESISTIVE GAS SENSORS; SILICON-ON-INSULATOR CMOS; SOI CMOS; ULTRA LOW POWER; WAFER ETCHING;

SILICON ON INSULATOR TECHNOLOGY;

EID: 49449095459     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2007.4419077     Document Type: Conference Paper

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