Field emission characteristics of BN nanofilms grown on GaN substrates

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 22, Issue 4, 2004, Pages 1958-1963

  Luo, Haitao ^a,b   Funakawa, Shingo ^a   Shen, Wenzhong ^b   Sugino, Takashi ^a  

^a OSAKA UNIVERSITY   (Japan)

^b SHANGHAI JIAO TONG UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM NITRIDE; ATOMIC FORCE MICROSCOPY; CUBIC BORON NITRIDE; ELECTRIC FIELDS; ELECTRON EMISSION; FIELD EMISSION DISPLAYS; FILM GROWTH; FLAT PANEL DISPLAYS; GALLIUM NITRIDE; GRAIN SIZE AND SHAPE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MICROELECTRONICS; PLASMA ETCHING; SURFACE ROUGHNESS;

EMISSION CURRENTS; FIELD ENHANCEMENT; NANOFILMS; PLASMA TREATMENT;

NANOSTRUCTURED MATERIALS;

EID: 4944266438     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1773845     Document Type: Article

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