Self-assembling growth of (Ba,Sr)TiO3 epitaxial thin films

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 22, Issue 4, 2004, Pages 1935-1939

  Li, Yanrong ^a   Li, Jinlong ^a   Zhang, Ying ^a   Deng, Xinwu ^a   Liu, Xingzhao ^a   Tao, Bowan ^a  

^a UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; BARIUM COMPOUNDS; CRYSTALLIZATION; FILM GROWTH; MICROWAVE DEVICES; MOLECULAR BEAM EPITAXY; OPTIMIZATION; PEROVSKITE; POLYCRYSTALLINE MATERIALS; PYROELECTRICITY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SELF ASSEMBLY; SINGLE CRYSTALS; STOICHIOMETRY; STRONTIUM COMPOUNDS; ULTRAHIGH VACUUM;

CRYSTALLIZATION TEMPERATURES; GROWTH RATES; HOMOEPITAXIAL THIN FILMS; PEROVSKITE OXIDES;

FERROELECTRIC THIN FILMS;

EID: 4944242448     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1775006     Document Type: Article

References (12)

1. J. Lee, Y. C. Choi, and B. S. Lee, Jpn. J. Appl. Phys., Part 1 36, 3644 (1997).
2. J. Y. Lee, J. Y. Juang, K. H. Wu, T. M. Uen, and Y. S. Gou, Surf. Sci. 488, 277 (2001).
3. Y. Yoneda, K. Sakaue, and H. Terauchi, Surf. Sci. 529, 283 (2003).
4. T. Y. Hu et al., Solid State Commun. 17, 315 (2001).
5. M. Lippmaa et al., Appl. Phys. Lett. 76, 2439 (2000).
6. T. Koida et al., Appl. Surf. Sci. 185, 226 (2002).
7. G. J. H. M. Rijnders et al., Appl. Phys. Lett. 70, 1888 (1997).
8. G. Koster et al., Appl. Phys. Lett. 74, 3729 (1999).
9. S. Kazuo et al., Jpn. J. Appl. Phys., Part 1 41, 269 (2002).
10. S. Miyake, S. Baba, and K. Numata, J. Photogr. Sci. 45, 90 (2002).
11. C. R. Cho and G. Alex, Appl. Phys. Lett. 75, 268 (1999).
12. M. Kawasaki et al., Science 226, 1540 (1994).