Electron trapping at the Si (111) atomic step edge

Applied Physics Letters

Volumn 85, Issue 9, 2004, Pages 1610-1612

  Ishii, Masashi ^a,b   Hamilton, Bruce ^b  

^a JAPAN SYNCHROTRON RADIATION RESEARCH INSTITUTE   (Japan)

^b UNIVERSITY OF MANCHESTER   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; EVAPORATION; INTERFACES (MATERIALS); OXIDATION; PROBABILITY; SILICON WAFERS; ULTRAVIOLET RADIATION;

ELECTRON TRAPPING; KELVIN FORCE MICROSCOPY (KFM); SURFACE DEFECTS; ULTRAVIOLET LASER IRRADIATION;

ELECTRON TRANSITIONS;

EID: 4944242240     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1787162     Document Type: Article

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