High-resistivity GaSb bulk crystals grown by the vertical bridgman method

Journal of Electronic Materials

Volumn 33, Issue 9, 2004, Pages 1012-1015

  Pino, R ^a   Ko, Y ^a   Dutta, P S ^a  

^a RENSSELAER POLYTECHNIC INSTITUTE   (United States)

Author keywords

Bridgman method; GaSb; High resistivity substrates

Indexed keywords

CARRIER CONCENTRATION; CRYSTAL GROWTH; DIFFUSION; DOPING (ADDITIVES); FLUID DYNAMICS; INTERFACES (MATERIALS); SUBSTRATES;

BRIDGMAN METHOD; CHEMICAL TREATMENT; HIGH-RESISTIVITY SUBSTRATES; STATIC STIRRERS;

GALLIUM COMPOUNDS;

EID: 4944232307     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-004-0028-7     Document Type: Article

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