Formation of silicon nanocrystals in SiO 2 by oxireduction reaction induced by impurity implantation and annealing

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 22, Issue 4, 2004, Pages 1669-1671

  Jacobsohn, L G ^a   Zanatta, A R ^b   Nastasi, M ^a  

^a LOS ALAMOS NATIONAL LABORATORY   (United States)

^b UNIVERSITY OF SÃO PAULO   (Brazil)

Author keywords

[No Author keywords available]

Indexed keywords

FULL WIDTH AT HALF MAXIMUM (FWHM); MICROELECTRONIC DEVICES; NANOCRYSTALS; OXIREDUCTION;

ANNEALING; BACKSCATTERING; CHARGE COUPLED DEVICES; FUSED SILICA; GIBBS FREE ENERGY; PHOTOLUMINESCENCE; RAMAN SCATTERING; REDUCTION; SODIUM CHLORIDE; SUPERLATTICES; THERMODYNAMICS; TRANSMISSION ELECTRON MICROSCOPY; VACUUM;

NANOSTRUCTURED MATERIALS;

EID: 4944222889     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1761410     Document Type: Article

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