Direct integration of single-walled carbon nanotubes with silicon

Proceedings of the IEEE Conference on Nanotechnology

Volumn 1, Issue , 2003, Pages 327-330

  Albrecht, P M ^a   Farrell, R M ^a   Ye, W ^b   Lyding, J W ^a,b  

^a United States of America   (United States)

^b UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

Author keywords

Atomic layer deposition; Carbon nanotubes; Chemical processes; Degradation; Energy resolution; Microscopy; Robustness; Silicon; Substrates; Tunneling

Indexed keywords

ATOMIC LAYER DEPOSITION; CARBON NANOTUBES; CHARGE TRANSFER; CHEMICAL INDUSTRY; DEGRADATION; DEPOSITION; ELECTRON TUNNELING; IN SITU PROCESSING; MICROSCOPIC EXAMINATION; NANOTECHNOLOGY; NANOTUBES; ROBUSTNESS (CONTROL SYSTEMS); SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING SILICON; SILICON; SUBSTRATES; YARN;

CHEMICAL PROCESS; ELECTRONIC CHARACTERIZATION; ELECTRONIC INTERACTIONS; ENERGY RESOLUTIONS; HYDROGEN-TERMINATED SI; SCANNING TUNNELING SPECTROSCOPY; SINGLE-WALLED CARBON NANOTUBE (SWNTS); ULTRAHIGH VACUUM SCANNING TUNNELING MICROSCOPIES;

SINGLE-WALLED CARBON NANOTUBES (SWCN);

EID: 4944220518     PISSN: 19449399     EISSN: 19449380     Source Type: Conference Proceeding    
DOI: 10.1109/NANO.2003.1231784     Document Type: Conference Paper

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