Strength and long-term reliability testing of wafer-bonded MEMS

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4755, Issue , 2002, Pages 613-623

  Petzold, Matthias ^a   Katzer, Dieter ^a   Wiemer, Maik ^b   Bagdahn, Joerg ^a,c  

^a FRAUNHOFER INSTITUTE FOR MECHANICS OF MATERIALS IWM   (Germany)

^b FRAUNHOFER IZM   (Germany)

^c Whiting School of Engineering   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BONDING; CANTILEVER BEAMS; ETCHING; FABRICATION; FATIGUE OF MATERIALS; FRACTURE; INTERFACES (MATERIALS); STRESS ANALYSIS; WSI CIRCUITS;

WAFERBONDING TECHNIQUES;

MICROELECTROMECHANICAL DEVICES;

EID: 4944219910     PISSN: 0277786X     EISSN: None     Source Type: Journal    
DOI: 10.1117/12.462863     Document Type: Article

References (15)

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5. Fatigue of directly wafer-bonded silicon under static and cyclic loading
6. The influence of sharp notches on the strength of directly bonded components
7. Bonding of silicon wafers for silicon on insulator
8. Direct measurement of the surface energy of crystals
9. Characterisation of directly bonded silicon wafers by means of the double cantilever crack opening method
10. The interface of silicon samples joined at room temperature by wafer direct bonding in ultrahigh vacuum
11. Hardness and fracture toughness of semiconductor materials studied by indentation and erosion technique
12. Measurement of the local strength distribution of directly bonded silicon wafers using the micro-chevron-test
13. Strength assessment of wafer-bonded micromechanical components using the Micro-Chevron-Test
14. Implementation of a low temperature wafer bonding process for acceleration sensors