The role of strain in hydrogenation induced cracking in Si Si1-x Gex Si structures

Applied Physics Letters

Volumn 93, Issue 4, 2008, Pages

  Shao, Lin ^a   Di, Zengfeng ^b   Lin, Yuan ^c   Jia, Q X ^b   Wang, Y Q ^b   Nastasi, M ^b   Thompson, Phillip E ^d   David Theodore, N ^e   Chu, Paul K ^f  

^a Texas A and M University   (United States)

^b LOS ALAMOS NATIONAL LABORATORY   (United States)

^c UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA   (China)

^d NAVAL RESEARCH LABORATORY   (United States)

^e FREESCALE SEMICONDUCTOR INC   (United States)

^f CITY UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; CRYSTAL GROWTH; EPITAXIAL GROWTH; GERMANIUM; HYDROGENATION; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; MOLECULAR DYNAMICS; NONMETALS; SELF ASSEMBLY; SILICON; SILICON ON INSULATOR TECHNOLOGY;

GE CONCENTRATIONS; H MIGRATION; HETEROSTRUCTURES; INTERFACIAL STRAIN; LONG RANGE; PLASMA HYDROGENATION; SI CAPPING; SI SUBSTRATE; ULTRATHIN SILICON-ON-INSULATOR;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 49149127470     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2963489     Document Type: Article

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