Surface Fermi level in GaAsSb structures grown by molecular beam epitaxy on InP substrates

Applied Physics Letters

Volumn 93, Issue 4, 2008, Pages

  Chouaib, Houssam ^a,d   Bru Chevallier, Catherine ^a   Apostoluk, Aleksandra ^a   Rudno Rudzinski, Wojciech ^b   Lijadi, Melania ^c   Bove, Philippe ^c  

^a INSTITUT DES NANOTECHNOLOGIES DE LYON   (France)

^b WROCLAW UNIVERSITY OF TECHNOLOGY   (Poland)

^c Picogiga International   (France)

^d KLA TENCOR CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAPS; EPITAXIAL STRUCTURES; FERMI-LEVEL PINNING; FRANZ-KELDYSH OSCILLATIONS; INP SUBSTRATES; PHOTOREFLECTANCE SPECTROSCOPY; PR SPECTRA; SB CONCENTRATION; STRUCTURES GROWN;

CONCENTRATION (PROCESS); CRYSTAL GROWTH; ELECTRIC CURRENTS; ELECTRIC FIELDS; ELECTROMAGNETIC FIELD THEORY; ELECTROMAGNETIC FIELDS; EPITAXIAL GROWTH; FERMI LEVEL; FERMIONS; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; MOLECULAR DYNAMICS; SEMICONDUCTOR MATERIALS;

SEMICONDUCTING GALLIUM;

EID: 49149109410     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2959829     Document Type: Article

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