Epitaxially grown ferroelectric thin films for memory applications (ferroelectric random access memories)

Phase Transitions

Volumn 81, Issue 7-8, 2008, Pages 667-678

  Funakubo, Hiroshi ^a   Oikawa, Takahiro ^a   Yokoyama, Shintaro ^a   Nagashima, Kuniharu ^a   Nakaki, Hiroshi ^a   Fujisawa, Takashi ^a   Ikariyama, Rikyu ^a   Yasui, Shintaro ^a   Saito, Keisuke ^b   Morioka, Hitoshi ^a,b   Han, Hee ^a   Baik, Sunggi ^c   Kim, Yong Kwan ^a,c   Suzuki, Toshimasa ^d  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^b BRUKER AXS INC   (United States)

^c Pohang University of Science and Technology (POSTECH)   (South Korea)

^d TAIYO YUDEN CO LTD   (Japan)

Author keywords

Crystal structure; Epitaxial film; Ferroelectric material; Ferroelectric random access memory

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DATA STORAGE EQUIPMENT; ELECTRONICS INDUSTRY; EPITAXIAL FILMS; EPITAXIAL GROWTH; FERROELECTRIC DEVICES; FERROELECTRIC THIN FILMS; FERROELECTRICITY; FERROMAGNETISM; ION BEAM ASSISTED DEPOSITION; LEAD; MAGNETIC DOMAINS; METALS; MOLECULAR BEAM EPITAXY; ORGANIC CHEMICALS; ORGANIC COMPOUNDS; ORGANOMETALLICS; OZONE WATER TREATMENT; PHASE TRANSITIONS; POLARIZATION; RANDOM ACCESS STORAGE; SUBSTRATES; THICK FILMS; THIN FILMS; ZIRCONIUM;

C -AXIS; CRYSTAL STRUCTURE; DOMAIN STRUCTURES; EPITAXIAL FILM; EPITAXIALLY GROWN; FERROELECTRIC MATERIAL; FERROELECTRIC RANDOM ACCESS MEMORIES; FERROELECTRIC RANDOM ACCESS MEMORY; LATTICE PARAMETERS; MEMORY APPLICATIONS; METAL-ORGANIC CHEMICAL VAPOR DEPOSITION; ORIENTED FILMS; PB(ZR , TI)O3; SATURATION POLARIZATION; SINGLE PHASING; SPONTANEOUS POLARIZATIONS; SRTI O3 SUBSTRATES; TETRAGONAL SYMMETRIES;

FERROELECTRIC FILMS;

EID: 49149092794     PISSN: 01411594     EISSN: 10290338     Source Type: Journal    
DOI: 10.1080/01411590802092206     Document Type: Review

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