Channel backscattering characteristics of high performance germanium pMOSFETs

ULIS 2008 - 9th International Conference on ULtimate Integration of Silicon

Volumn , Issue , 2008, Pages 7-10

  Dobbie, A ^a   De Jaeger, B ^b   Meuris, M ^b   Whall, T E ^a   Parker, E H C ^a   Leadley, D R ^a  

^a UNIVERSITY OF WARWICK   (United Kingdom)

^b IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

BACKSCATTERING; CARRIER MOBILITY; GERMANIUM; HIGH PERFORMANCE LIQUID CHROMATOGRAPHY; NONMETALS; SILICON;

BACKSCATTERING COEFFICIENTS; BALLISTICITY; CHANNEL BACKSCATTERING; EFFECTIVE MASSES; FUTURE PERFORMANCE; GA TE LENGTHS; INTERNATIONAL CONFERENCES; P-MOSFETS; SHORT CHANNELS;

MOSFET DEVICES;

EID: 49049121665     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ULIS.2008.4527129     Document Type: Conference Paper

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