Electronic structure of highly crystalline polyaniline by study of tunneling conduction in n+-Si/self-assembled monolayer/polyaniline heterostructures

Organic Electronics

Volumn 9, Issue 5, 2008, Pages 602-608

  Sutar, D S ^a   Lenfant, S ^b   Vuillaume, D ^b   Yakhmi, J V ^a  

^a BHABHA ATOMIC RESEARCH CENTRE   (India)

^b INSTITUT D ELECTRONIQUE   (France)

Author keywords

C AFM; Electronic structure; MIS; PANI; Self assembly; Tunneling

Indexed keywords

CRYSTALLINE MATERIALS; DOPING (ADDITIVES); ELECTRON TUNNELING; ELECTRONIC STRUCTURE; HETEROJUNCTIONS; MANAGEMENT INFORMATION SYSTEMS; METAL INSULATOR BOUNDARIES; MIS DEVICES; OXIDE FILMS; POLARONS; POLYANILINE; SCANNING ELECTRON MICROSCOPY; SELF ASSEMBLED MONOLAYERS; SELF ASSEMBLY; SILICA; SILICON OXIDES; SINGLE CRYSTALS;

CONDUCTANCE SPECTRA; HOMO-LUMO ENERGY GAP; INHOMOGENEOUS CONDUCTIVITY; IV CHARACTERISTICS; METAL-INSULATOR-SEMICONDUCTORS; PANI; THIN INSULATING LAYERS; TUNNELING CONDUCTION;

SUBSTRATES;

EID: 49049114930     PISSN: 15661199     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.orgel.2008.04.007     Document Type: Article

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