c-axis inclined AlN film growth in planar system for shear wave devices

Diamond and Related Materials

Volumn 17, Issue 7-10, 2008, Pages 1770-1774

  Fardeheb Mammeri, A ^a,b   Assouar, M B ^a   Elmazria, O ^a,c   Gatel, C ^d   Fundenberger, J J ^e   Benyoucef, B ^b  

^a INSTITUT JEAN LAMOUR   (France)

^b UNIVERSITY OF TLEMCEN   (Algeria)

^c UNIVERSITÉ DE LORRAINE   (France)

^d CEMES CNRS   (France)

^e UNIVERSITÉ PAUL VERLAINE METZ   (France)

Author keywords

Aluminium nitride (AlN); Shear waves; Sputtering; Surface acoustic wave devices

Indexed keywords

ACOUSTIC SURFACE WAVE DEVICES; ACOUSTIC SURFACE WAVE FILTERS; ACOUSTIC WAVES; ACOUSTICS; ELASTIC WAVES; ELECTRIC CURRENTS; LIQUID PHASE EPITAXY; MOLECULAR BEAM EPITAXY; NONMETALS; SHEAR WAVES; SILICON; SILICON COMPOUNDS; SILICON WAFERS; THICK FILMS;

ALN FILMS; ALN THIN FILMS; ALUMINIUM NITRIDE (ALN); BULK ACOUSTIC WAVE DEVICES; C -AXIS; CHARACTERISATION; LIQUID SENSORS; PLANAR SYSTEMS; SPUTTERING; SURFACE ACOUSTIC WAVE DEVICES; WAVE GENERATION;

FILM GROWTH;

EID: 49049114506     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.diamond.2008.02.016     Document Type: Article

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