Solidly mounted BAW filters for the 6 to 8 GHz range based on AlN thin films

Proceedings of the IEEE Ultrasonics Symposium

Volumn 1, Issue , 2001, Pages 843-846

  Lanz, Roman ^a   Dubois, Marc Alexandre ^a   Muralt, Paul ^a  

^a EPFL   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM NITRIDE; BANDWIDTH; CRYSTAL RESONATORS; FILM GROWTH; GRAIN BOUNDARIES; INSERTION LOSSES; INTERFACES (MATERIALS); THIN FILMS; WAVE FILTERS; X RAY DIFFRACTION ANALYSIS;

BULK ACOUSTIC WAVE FILTERS; BULK ACOUSTIC WAVE RESONATORS; SOLIDLY MOUNTED RESONATORS;

ACOUSTIC BULK WAVE DEVICES;

EID: 0035729775     PISSN: 10510117     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)

1. Power handling and temperature coefficient studies in FBAR duplexers for the 1900 MHz PCS band
2. High frequency oscillators using cointegrated BAW thin film piezoelectrics with microwave BJTS
3. Properties of AIN thin films for piezoelectric transducers and microwave filter applications
4. Solidly mounted resonators and filters
5. Stress and piezoelectric properties of AlN thin films deposited onto metal electrodes by pulsed direct current reactive sputtering
6. Zero-temperature coefficient SAW devices on AlN epitaxial films
7. BAW resonators based on AlN thin films