The effect of interelectrode spacing on field emission in nanodiamond lateral vacuum devices

Diamond and Related Materials

Volumn 17, Issue 7-10, 2008, Pages 1808-1811

  Subramanian, K ^a   Kang, W P ^a   Davidson, J L ^a   Choi, B K ^a  

^a VANDERBILT UNIVERSITY   (United States)

Author keywords

Lateral device; Nanocrystalline diamond; NEMS; Sensors; Vacuum field emission

Indexed keywords

ELECTRIC FIELD EFFECTS; ELECTRIC FIELDS; ELECTROMAGNETIC FIELD THEORY; ELECTROMAGNETIC FIELDS; ELECTROMAGNETISM; FIELD EMISSION; FIELD EMISSION CATHODES; GALLIUM ALLOYS; LITHOGRAPHY; NITROGEN; NONMETALS; OPTICAL DESIGN;

ANODE VOLTAGES; ANODE-CATHODE; APPLIED ELECTRIC FIELD; DEVICE STRUCTURES; EMISSION CURRENTS; EMITTER DEVICES; EMITTER DIODES; EMITTER FINGERS; FABRICATED DEVICES; FIELD EMISSIONS; HIGH FIELDS; I-V CHARACTERISTICS; INTER-ELECTRODE SPACING; INTERELECTRODE; LATERAL DEVICE; NANO DIAMONDS; NANOCRYSTALLINE DIAMOND; NEMS; OPERATING VOLTAGES; SCALING BEHAVIORS; SENSORS; TURN-ON ELECTRIC FIELD; VACUUM DEVICES; VACUUM FIELD EMISSION;

DIAMONDS;

EID: 48849093284     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.diamond.2008.04.004     Document Type: Article

References (17)

1. Oro J.A., and Ball D.D. J. Vac. Sci. Technol. B 11 (1993) 464
2. Kang W.P., Davidson J.L., Wisitsora-at A., Howell M., Jamaludin A., Wong Y.M., Soh K.L., and Kerns D.V. J. Vac. Sci. Technol. B 21 (2003) 593
3. Subramanian K., Kang W.P., Davidson J.L., Hofmeister W.H., Choi B.K., and Howell M. Diamond Relat. Mater. 14 (2005) 2099
4. Subramanian K., Kang W.P., and Davidson J.L. J. Vac. Sci. Technol. B 25 (2007) 532
5. Subramanian K., Kang W.P., Davidson J.L., Takalkar R.S., Choi B.K., Howell M., and Kerns D.V. Diamond Relat. Mater. 15 (2006) 1126
6. Xiao X., Auciello O., Cui H., Lowndes D.H., Merkulov V.L., and Carlisle J. Diamond Relat. Mater. 15 (2006) 244
7. Arslan D., Dehé A., and Hartnagel H.L. J. Vac. Sci. Technol. B 17 (1999) 784
8. Qian K., Chen T., Yan B., Lin Y., Xu D., Sun Z., and Cai B. Physica E 31 (2006) 1
9. Xia S.H., Liu J., Cui D.F., Han J.H., Chen S.F., and Wang L. J. Vac. Sci. Technol. B 15 (1997) 1573
10. Lee H.-C., and Huang R.-S. IEEE Trans. Electr. Dev. 39 (1992) 313
11. Jiang J.C., White R.C., and Allen P.K. Intl. Conf. on Solid-State Sensors and Actuators (TRANSDUCERS 91). Digest of Technical Papers (1991) 238
12. Fowler R.H., and Nordheim L. Proc. R. Soc. Lond. 119 (1928) 173
13. Yang C.K., le Fèbre A.J., Pandraud G., van der Drift E., and French P.J. 20th Intl. Vacuum Nanoelectronics Conf. (IVNC). Tech. Dig. (2007) 72
14. H.H. Busta, D.W. Jenkins, B.J. Zimmerman, J.E. Pogemiller, Proc. IEDM, 1991, p. 213.
15. Busta H.H., Pogemiller J.E., and Zimmerman B.J. J. Micromechanics Microengineering 3 (1993) 49
16. Kang W.P., Davidson J.L., Subramanian K., Choi B.K., and Galloway K.F. IEEE Trans. Nucl. Sci. 54 (2007) 1061
17. Subramanian K., Schroeder R., Kang W.P., and Davidson J.L. 20th Intl. Vacuum Nanoelectronics Conf. (IVNC). Tech. Dig. (2007) 70