Study of Mn incorporation into GaN:Mn magnetic semiconductor thin films prepared by plasma assisted MOCVD

Proceedings of the 2006 International Conference on Nanoscience and Nanotechnology, ICONN

Volumn , Issue , 2006, Pages 344-347

  Mulyanti, Budi ^a,b   Subagio, A ^a,c   Sutanto, H ^a,c   Arsyad, F S ^a,d   Arifin, P ^a   Budiman, M ^a   Barmawi, M ^a  

^a BANDUNG INSTITUTE OF TECHNOLOGY   (Indonesia)

^b UNIVERSITAS PENDIDIKAN INDONESIA   (Indonesia)

^c DIPONEGORO UNIVERSITY   (Indonesia)

^d SRIWIJAYA UNIVERSITY   (Indonesia)

Author keywords

AFM; EDX; GaN:Mn; PA MOCVD; VSM; XRD

Indexed keywords

GALLIUM ALLOYS; GALLIUM NITRIDE; MAGNETIC PROPERTIES; MAGNETIC SEMICONDUCTORS; MAGNETIC THIN FILMS; MANGANESE; MANGANESE COMPOUNDS; METALLIZING; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NANOSCIENCE; NANOTECHNOLOGY; NITROGEN; NONMETALS; PLASMA DEPOSITION; PLASMAS; PULSED LASER DEPOSITION; SEMICONDUCTING GALLIUM; THICK FILMS; THIN FILMS;

CHEMICAL VAPORS; EFFECT OF MN; INTERNATIONAL CONFERENCES; MAGNETIC (CE); NANOSCIENCE AND NANOTECHNOLOGY (NST); SEMICONDUCTOR THIN FILMS; TRIMETHYL GALLIUM (TMGA);

VAPOR DEPOSITION;

EID: 48749116458     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICONN.2006.340622     Document Type: Conference Paper

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