Ferromagnetic and paramagnetic semiconductors based upon GaN, AlGaN, and GaP

Materials Research Society Symposium - Proceedings

Volumn 690, Issue , 2002, Pages 9-14

  Overberg, Mark E ^a   Thaler, Gerald T ^a   Frazier, Rachel M ^a   Gila, Brent P ^a   Abernathy, Cammy R ^a   Pearton, Stephen J ^a   Theodoropoulou, Nikoleta A ^a   Arnason, Stephen B ^a   Hebard, Arthur F ^a   Park, Yun D ^a  

^a J Crayton Pruitt Family Department of Biomedical Engineering   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON DEVICE MANUFACTURE; FERROMAGNETISM; FILM GROWTH; HIGH TEMPERATURE EFFECTS; MAGNETIC HYSTERESIS; MAGNETIC VARIABLES MEASUREMENT; MAGNETIZATION; MOLECULAR BEAM EPITAXY; MORPHOLOGY; PARAMAGNETISM; SEMICONDUCTING GALLIUM COMPOUNDS; SURFACES;

FERROMAGNETIC SEMICONDUCTORS; GAS SOURCE MOLECULAR BEAM EPITAXY; PALEOMAGNETIC SEMICONDUCTORS; TEMPERATURE DEPENDENT MAGNETIZATION MEASUREMENT;

MAGNETIC SEMICONDUCTORS;

EID: 0036351652     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (16)

1. Nanoscale magnetic regions formed in GaN implanted with Mn