Ultra-uniform threshold voltage in SONOS-type non-volatile memory with novel charge trap layer formed by plasma nitridation

21st IEEE Non-Volatile Semiconductor Memory Workshop 2006, NVSMW 2006

Volumn 2006, Issue , 2006, Pages 70-71

  Sunamura, Hiroshi ^a   Masuzaki, Koji ^a   Terai, Masayuki ^a   Kotsuji, Setsu ^a   Onizawa, Takashi ^a   Morioka, Ayuka ^a   Ikarashi, Taeko ^a   Ikarashi, Nobuyuki ^a   Fujieda, Shinji ^a   Watanabe, Hirohito ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 33751038529     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/.2006.1629499     Document Type: Conference Paper

References (4)

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2. T. Ishimaru et al., IEDM Tech. Dig., pp.885-888 (2004).
3. J. -H. Kim et al., VLSI Tech. Dig. pp.31-32 (2003).
4. H. Reisinger et al., J. Appl. Phys. 79, pp. 3028-3034 (1996).