Characterization of anodic silicon oxide films grown in room temperature ionic liquids

Electrochimica Acta

Volumn 53, Issue 25, 2008, Pages 7396-7402

  Fiorito, Pablo A ^a   Alves, Wendel A ^a   Bazito, Fernanda F C ^b   Haber, Fady El ^c   Froyer, Gerard ^c   de Torresi, Susana I Córdoba ^d   Torresi, Roberto M ^d  

^a Universidade Federal   (Brazil)

^b FEDERAL UNIVERSITY OF SÃO PAULO   (Brazil)

^c UNIVERSITÉ DE NANTES   (France)

^d UNIVERSITY OF SÃO PAULO   (Brazil)

Author keywords

Electrochemical oxidation; Impedance spectroscopy; Ionic liquids; Roughness; Silicon oxide

Indexed keywords

ANODIC OXIDATION; ELECTROCHEMICAL IMPEDANCE SPECTROSCOPY; ELECTROCHEMICAL OXIDATION; IONIC LIQUIDS; SILICON COMPOUNDS; SILICON OXIDES; SURFACE ROUGHNESS; X RAY PHOTOELECTRON SPECTROSCOPY;

BIS(TRIFLUOROMETHANE SULFONYL)IMIDE; CHEMICAL DISSOLUTION; ELECTROCHEMICAL TECHNIQUES; ELECTROFORMATIONS; IMPEDANCE SPECTROSCOPY; LOW WATER-CONTENT; NON-STOICHIOMETRIC; ROOM TEMPERATURE IONIC LIQUIDS;

OXIDE FILMS;

EID: 48449099067     PISSN: 00134686     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.electacta.2007.11.048     Document Type: Article

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