Non-stoichiometric silicon oxide deposited at low gaseous N 2O/SiH4 ratios

Thin Solid Films

Volumn 459, Issue 1-2, 2004, Pages 220-223

  Da Silva Zambom, Luís ^a   Lantin, Daniela Garrote ^a   Onoda, Edyr ^a   Verdonck, Patrick ^b  

^a FACULDADE DE TECNOLOGIA DE SÃO PAULO   (Brazil)

^b UNIVERSITY OF SÃO PAULO   (Brazil)

Author keywords

Non stoichiometric silicon oxide; Photoconductivity; Thin films

Indexed keywords

ANNEALING; ATMOSPHERIC HUMIDITY; CHEMICAL VAPOR DEPOSITION; NITROGEN OXIDES; PHOTOCONDUCTIVITY; POLYCRYSTALLINE MATERIALS; POLYSILICON; PRESSURE EFFECTS; SILICA; STOICHIOMETRY;

NON-STOICHIOMETRIC SILICON OXIDE; SILICON-OXYGEN BONDS;

THIN FILMS;

EID: 2942597942     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2003.12.087     Document Type: Conference Paper

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