Characteristics of 10 kV SiC MOSFET and PIN diode and their application prospect in high voltage high frequency DC/DC converter

PESC Record - IEEE Annual Power Electronics Specialists Conference

Volumn , Issue , 2007, Pages 72-77

  Wang, Jun ^a   Yang, Liyu ^a   Zhao, Tiefu ^a   Huang, Alex Q ^a  

^a NORTH CAROLINA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AP PLICATION PROSPECT; APPLICATIONS.; DC/DC CONVERTERS; DEVICE SIMULATIONS; HIGH FREQUENCIES; HIGH FREQUENCY POWER; HIGH VOLTAGES; LOSS CHARACTERISTICS; P-I-N DIODES; SIC MOSFET; UNITED STATES;

DC GENERATORS; MOSFET DEVICES; POWER ELECTRONICS; SEMICONDUCTOR DIODES;

SILICON CARBIDE;

EID: 48349146435     PISSN: 02759306     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PESC.2007.4341964     Document Type: Conference Paper

References (7)

1. J. N. Shenoy, J. A. Cooper, Jr., and M. R. Melloch, "High-Voltage Double-Implanted Power MOSFETs in 6H-SiC", IEEE Electron Device Lett, Vol. 18, No. 3, pp. 93-95, March 1997.
2. S. -H Ryu, A. Agarwal, James Richmond, et al., "10 A, 2.4 kV Power DiMOSFETs in 4H-SiC", IEEE ELECTRON LETTERS, VOL. 23, NO. 6, pp. 321-323, 2002
3. A. Agarwal, S.-H. Ryu, and J. Palmour et al., "Silicon Carbide, Recent Major Advances", W. J. Choyke et al., Eds, Berlin, Germany: Springer-Verlag, 2004, pp. 785-812.
4. S. -H Ryu, A. Agarwal, S. Krishnaswami, et al., "Development of 10 kV 4H-SiC Power DMOSFETs", Mat. Sci. Form, Vol. 457-460, pp. 1385-1388, 2004.
5. Ranbir Singh, Kenneth G. Irvine, D. Craig Capell, et al., "Large Area, Ultra-high Voltage 4H-SiC p-i-n Rectifiers, IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 49, NO. 12, 2002, pp 2308-2316
6. James A. Cooper, Jr., Michael R. Melloch, Ranbir Singh, Anant Agarwal, et al., " Status and Prospects for SiC Power MOSFETs", IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 49, NO. 4, 2002, pp 658-664
7. B JAYANT BALIGA, Silicon Carbide Power Devices, 2005.