Advanced activation and stability of ultra-shallow junctions using flash-assisted RTP

13th IEEE International Conference on Advanced Thermal Processing of Semiconductors, RTP 2005

Volumn , Issue , 2005, Pages 73-83

  Gelpey, J ^a   McCoy, S ^a   Lerch, W ^b   Paul, S ^b   Niess, J ^b   Cristiano, F ^c   Bolze, D ^d  

^a Mattson Technology Canada Inc   (Canada)

^b MATTSON THERMAL PRODUCTS GMBH   (United States)

^c LAAS CNRS   (France)

^d NONE   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CHEMICAL ACTIVATION; CRYSTALS; ELECTRIC CONDUCTIVITY; ELECTRIC RESISTANCE; INTERNET PROTOCOLS; ION BOMBARDMENT; ION IMPLANTATION; LOGIC DEVICES; NANOTECHNOLOGY; OXYGEN; RAPID THERMAL ANNEALING; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR MATERIALS; SHEET RESISTANCE; SILICON WAFERS;

65NM NODES; ADVANCED ANNEALING; DEVICE TECHNOLOGIES; DOPANT PROFILES; FUTURE TECHNOLOGIES; HALL MEASUREMENTS; HIGH ACTIVATIONS; HIGH TEMPERATURES; INTERMEDIATE TEMPERATURES; JUNCTION DEPTHS; OPTIMAL PROCESSES; PEAK WIDTHS; PERFORMANCE SPECIFICATIONS; RESISTANCE VALUES; SHALLOW JUNCTIONS; SPIKE ANNEALING; TEMPERATURE JUMPS; TEMPERATURE RAMPS; THERMAL PROCESSES;

SEMICONDUCTOR JUNCTIONS;

EID: 48349141909     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RTP.2005.1613685     Document Type: Conference Paper

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