Thin film PIN photodiodes for optoelectronic silicon on sapphire CMOS

Proceedings - IEEE International Symposium on Circuits and Systems

Volumn 4, Issue , 2003, Pages

  Apsel, A ^a   Culurciello, E ^b   Andreou, A G ^b   Aliberti, K ^b  

^a Department of Obstetrics Gynecology   (United States)

^b JOHNS HOPKINS UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; ELECTRONICS PACKAGING; OPTOELECTRONIC DEVICES; SILICON ON INSULATOR TECHNOLOGY; SUBSTRATES; THIN FILMS;

OPTICAL SIGNALS;

PHOTODIODES;

EID: 0037743400     PISSN: 02714310     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

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2. S. Cristoloveanu, "SOI a metamorphosis of silicon," IEEE Circuits and Devices, vol. 15, no. 1, pp. 26-32, 1999.
3. O. Vendier, S. Bond, M. Lee, S. Jung, M. Brooke, N. M. Jokerst, and R. P. Leavitt, "Stacked si CMOS circuits with a 40-Mb/s through-silicon optical interconnect," IEEE Photonics Technology Letters, vol. 10, no. 4, pp. 606-608, Apr. 1998.
4. J. Jamieson, R. McFee, G. Plass, R. Grube, and R. Richards, Infrared Physics and Engineering, McGraw-Hill, 1963.
5. A. Andreou, Z. Kalayjian, A. Apsel, P. O. Pouliquen, R. A. Athale, G. Simonis, and R. Reedy, "Hybrid integration of surface emitting vcsel's with ultra-thin silicon on sapphire (sos) cmos vlsi circuits," Circuits and Systems Magazine, Aug. 2001.