Estimating threshold reduction for spin-injected semiconductor lasers

Applied Physics Letters

Volumn 93, Issue 3, 2008, Pages

  Vurgaftman, I ^a   Holub, M ^a   Jonker, B T ^a   Meyer, J R ^a  

^a NAVAL RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CONDUCTIVITY; ELECTRONS; HETEROJUNCTIONS; INJECTION (OIL WELLS); LASERS; OPTICAL LOSSES; PULSED LASER DEPOSITION; SEMICONDUCTOR MATERIALS; SPIN DYNAMICS;

ACTIVE REGION (AR); AMERICAN INSTITUTE OF PHYSICS (AIP); AUGER PROCESSES; ELECTRON DENSITIES; ELECTRON SPINS; FULLY SPIN-POLARIZED; INTRINSIC PROPERTIES; MATERIAL GAIN; OPTICAL (PET) (OPET); RECOMBINATION MECHANISMS; THRESHOLD GAIN; THRESHOLD REDUCTION;

SEMICONDUCTOR LASERS;

EID: 48249114091     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2957656     Document Type: Article

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