LP-MOCVD growth of GaAlN/GaN heterostructures on silicon carbide. Application to HEMT's devices

Materials Research Society Symposium - Proceedings

Volumn 798, Issue , 2003, Pages 107-112

  Di Forte Poisson, M A ^a   Magis, M ^a   Tordjman, M ^a   Aubry, R ^a   Peschang, M ^a   Delage, S L ^a   Di Persio, J ^b   Grimbert, B ^c   Hoel, V ^c   Delos, E ^c   Ducatteau, D ^c   Gaquiere, C ^c  

^a THALES RESEARCH AND TECHNOLOGY   (France)

^b UNIV LILLE   (France)

^c INSTITUT D ELECTRONIQUE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION; CORRELATION METHODS; GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SILICON CARBIDE; X RAY DIFFRACTION;

DEFECT DENSITY; DRAIN CURRENTS; PULL SYSTEMS; SONOGAUGE MEASUREMENTS;

HETEROJUNCTIONS;

EID: 2942691980     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-798-y10.26     Document Type: Conference Paper

References (4)

1. J.R. Shealy, V. Kaper, V. Tilak, T. Prunty, J.A. Smart, B. Green, and L.F. Eastman, " An AlGaN/GaN high-electron-mobility transistor with an AlN sub-buffer layer", J. Phys. Condens. Matter 14, (2002) 3499-3509.
2. H. MCD. Hobgood, "Silicon Carbide Crystal and Substrate Technology: A Survey of Recent Advances", (ICSCRM2003, Proc, Lyon, 2003) pp.46.
3. M. Micovic, N.X. Nguyen, P; Janke, W.S. Wong, P. Hashimoto, L.M. McCray, C. Nguyen, Electron. Lett. 36 (2000) 358.
4. M.-A. di Forte-Poisson, A. Romann, M. Tordjman, M. Magis, J. Di Persio, Ch. Jacques, and P. Vicente, " LPMOCVD growth of GaN on Silicon Carbide", Journal of Crystal Growth, 248 (2003) pp.533-538.