Progress in microwave GaN HEMT grown by MBE on silicon and smart cut TM engineered substrates for high power applications

GAAS 2005 Conference Proceedings - 13th European Gallium Arsenide and Other Compound Semiconductors Application Symposium

Volumn 2005, Issue , 2005, Pages 369-372

  Larheche H ^a   Faure, B ^b   Richtarch, C ^b   Letertre, F ^b   Langer, R ^a   Bove, P ^a  

^a Picogiga International   (France)

^b PARC TECHNOLOGIQUE DES FONTAINES   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ENERGY GAP; GALLIUM NITRIDE; MOLECULAR BEAM EPITAXY; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH; THIN FILMS;

HIGH POWER APPLICATIONS; NITROGEN PRECURSOR; SICOI STRUCTURE; WIDE BAND GAP (WBG);

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 33847196118     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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