Characterization of nickel silicides produced by millisecond anneals

15th IEEE International Conference on Advanced Thermal Processing of Semiconductors, RTP 2007

Volumn , Issue , 2007, Pages 155-160

  Adams, Bruce ^a   Jennings, Dean ^a   Ma, Kai ^a   Mayur, Abhilash J ^a   Moffatt, Steve ^a   Nagy, Stephen G ^a   Parihar, Vijay ^a  

^a APPLIED MATERIALS INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANALYSIS TECHNIQUES; AND GATES; ANNEAL TEMPERATURES; COMPLEMENTARY METAL OXIDE SEMICONDUCTORS; FILM CHARACTERISTICS; LASER POWERS; LOGIC APPLICATIONS; MILLISECOND ANNEALS; NICKEL FILMS; NICKEL SILICIDES; NICKEL SUICIDES; SPIKE ANNEALS; TECHNOLOGY NODES;

ACTIVATION ENERGY; CHARGE COUPLED DEVICES; COBALT; CRYSTALS; ELECTRIC CONDUCTIVITY; INTERNET PROTOCOLS; LOGIC CIRCUITS; METALLIC COMPOUNDS; MOS DEVICES; NICKEL; NICKEL ALLOYS; NICKEL COMPOUNDS; RAPID THERMAL ANNEALING; RAPID THERMAL PROCESSING; SEMICONDUCTOR MATERIALS; SILICIDES; TITANIUM; TRANSITION METALS; TRANSMISSION ELECTRON MICROSCOPY; X RAY ANALYSIS; X RAY DIFFRACTION ANALYSIS;

NICKEL OXIDE;

EID: 47949113075     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RTP.2007.4383836     Document Type: Conference Paper

References (11)

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11. th IEEE international Conference on Advanced Thermal Processing of Semiconductors, Portland, OR pp 47-51, Sept 28-30, 2004