Sacrificial deuterium passivation for improved interface engineering in gate stack processing

15th IEEE International Conference on Advanced Thermal Processing of Semiconductors, RTP 2007

Volumn , Issue , 2007, Pages 57-63

  Pap, Andrea Edit ^a   Battistig, Gábor ^a   Dücso, Csaba ^a   Bársony, István ^a   Kamarás, Katalin ^b   Nenyei, Zsolt ^c   Dietl, Waltraud ^c   Kirchner, Christoph ^c  

^a RESEARCH INSTITUTE FOR TECHNICAL PHYSICS AND MATERIALS SCIENCE   (Hungary)

^b INSTITUTE OF EXPERIMENTAL MEDICINE   (Hungary)

^c Mattson Thermal Products GmbH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC PHYSICS; CRYSTALS; DATA STORAGE EQUIPMENT; DESORPTION; DEUTERIUM; ELECTRIC CONDUCTIVITY; HYDROGEN; INTERNET PROTOCOLS; NONMETALS; OXIDES; RAPID THERMAL ANNEALING; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR MATERIALS; SILICA; SILICON COMPOUNDS; SURFACE CHEMISTRY; SURFACE TREATMENT; THERMAL DESORPTION; VACUUM;

ATOMIC FLATNESSES; ATOMIC LEVELS; FREE SILICONS; GATE STACKS; HIGH REACTIVITIES; HYDROGEN PASSIVATIONS; IC TECHNOLOGIES; INTERFACE ENGINEERINGS; NATIVE OXIDES; PROCESSING STEPS; ROBUST PROCESSES; ROOM TEMPERATURES; SHORT TIMES; SI SURFACES; SILICON OXIDES; VACUUM AMBIENT; VACUUM PROCESSING;

PASSIVATION;

EID: 47949112777     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RTP.2007.4383819     Document Type: Conference Paper

References (11)

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