Atomic-scale flattening of SiC surfaces by electroless chemical etching in HF solution with Pt catalyst

Applied Physics Letters

Volumn 90, Issue 20, 2007, Pages

  Arima, Kenta ^a   Hara, Hideyuki ^a   Murata, Junji ^a   Ishida, Takeshi ^a   Okamoto, Ryota ^a   Yagi, Keita ^a   Sano, Yasuhisa ^a   Mimura, Hidekazu ^a   Yamauchi, Kazuto ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CATALYSTS; ETCHING; HAFNIUM; PLATINUM; SCANNING TUNNELING MICROSCOPY; SILICON CARBIDE;

ATOMIC SCALE FLATTENING; ELECTROLESS CHEMICAL ETCHING; SINGLE BILAYER HEIGHT;

SURFACE PHENOMENA;

EID: 34248997544     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2739084     Document Type: Article

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