A robust and physically based compact SOI-LDMOS model

European Solid-State Device Research Conference

Volumn , Issue , 2002, Pages 455-458

  Aarts, A C T ^a   Van Langevelde, R ^a  

^a PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

BIAS CONDITIONS; COMPUTATION TIME; DOPING GRADIENTS; DRIFT REGIONS; IMPROVED CONVERGENCE; OPERATING TEMPERATURE; PHYSICALLY BASED; TERMINAL VOLTAGES;

MOS DEVICES;

EID: 47749125258     PISSN: 19308876     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDERC.2002.194966     Document Type: Conference Paper

References (11)

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2. C.M. Liu et al., "A Closed-form Physical Back-Gate-Bias Dependent Quasi-saturation Model for SOI Lateral DMOS Devices with Self-Heating for Circuit Simulation", Proc. ISPSD, 1995, pp. 321-324.
3. A.C.T. Aarts et al., "Modelling of High-Voltage SOI-LDMOS Transistors including Self-Heating", Proc. SISPAD, 2001,pp. 246-249.
4. J. Jang et al., "Circuit Model for Power LDMOS including Quasi-Saturation", Proc. SISPAD, 1999, pp. 15-18.
5. J. Victory et al., "A Physically-Based Compact Model for LDMOS Transistors ", Proc. SISPAD, 1998, pp. 271-274.
6. M.Y. Hong and D.A. Antoniadis, "Theoretical Analysis and Modeling of Submicron Channel Length DMOS Transistors", IEEE Trans. Electron Devices, Vol. 42, No 9, 1995,pp. 1614-1622.
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9. N. D'Halleweyn, "Modelling and Characterisation of Silicon-On-Insulator Lateral Double Diffused MOSFETs for Analogue Circuit Simulation", Ph.D. Thesis University of Southampton, 2001. See also ESSDERC 2001 Workshop on Modelling and Electrical Characterisation of Advanced High-Voltage MOS Transistors.
10. R. van Langevelde and F.M. Klaassen, "An Explicit Surface-potential-based MOSFET Model for Circuit Simulation", Solid-State Electronics, Vol. 44, 2000, pp. 409 - 418. See also http://www.semiconductors.philips.com/Philips-Models.
11. K. Joardar et al., "An improved MOSFET Model for Circuit Simulation", IEEE Trans. Electron Devices, Vol. ED-45, No 1, 1998, pp. 134 - 148.