Intense laser radiation and magnetic field effects on the electronic states in quantum well wires

Journal of Optoelectronics and Advanced Materials

Volumn 9, Issue 9, 2007, Pages 2713-2718

  Niculescu, E C ^a   Burileanu, L ^a  

^a UNIVERSITY POLITEHNICA OF BUCHAREST   (Romania)

Author keywords

Binding and transition energies; Intense laser field; Magnetic field; Quantum well wires

Indexed keywords

BINDING ENERGY; ELECTRIC FIELDS; GALLIUM ARSENIDE; III-V SEMICONDUCTORS; MAGNETIC FIELD EFFECTS; MAGNETIC FIELDS; OPTICAL PROPERTIES; QUANTUM THEORY; QUANTUM WELL LASERS; RADIATION EFFECTS; WIRE;

APPLIED MAGNETIC FIELDS; EFFECTIVE MASS APPROXIMATION; ELECTRONIC AND OPTICAL PROPERTIES; INTENSE LASER FIELD; INTENSE LASER RADIATION; QUANTUM WELL WIRE; STATIC MAGNETIC FIELDS; TRANSITION ENERGY;

SEMICONDUCTOR QUANTUM WELLS;

EID: 38549157748     PISSN: 14544164     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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