Binding energies of hydrogen-like impurities in a semiconductor in intense terahertz laser fields

International Journal of Modern Physics B

Volumn 17, Issue 12, 2003, Pages 2487-2496

  Nie, J L ^a,b   Xu, W ^a   Lin, L B ^b  

^a AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

^b SICHUAN UNIVERSITY   (China)

Author keywords

Intense laser radiation; Semiconductor; Terahertz laser

Indexed keywords

HYDROGEN;

ANALYSIS; ARTICLE; ENERGY; LASER; SEMICONDUCTOR;

EID: 0037678824     PISSN: 02179792     EISSN: None     Source Type: Journal    
DOI: 10.1142/S021797920301834X     Document Type: Article

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