GaN-based light-emitting diode with ZnO nanotexture layer prepared using hydrogen gas

Applied Surface Science

Volumn 254, Issue 20, 2008, Pages 6586-6589

  Chen, Lung Chien ^a   Chung, Cheng Ban ^a  

^a NATIONAL TAIPEI UNIVERSITY OF TECHNOLOGY   (Taiwan)

Author keywords

GaN; Hydrogen treatment; Spraying pyrolysis method; ZnO nanotexture

Indexed keywords

CONDUCTIVE FILMS; GALLIUM NITRIDE; HYDROGEN; III-V SEMICONDUCTORS; INDIUM COMPOUNDS; LIGHT EMITTING DIODES; METALLIC FILMS; OXIDE FILMS; PYROLYSIS; TIN OXIDES; ZINC OXIDE;

FORWARD BIAS VOLTAGE; GAN-BASED LIGHT-EMITTING DIODES; HYDROGEN TREATMENTS; INJECTION CURRENTS; LIGHT OUTPUT POWER; NANO-TEXTURE; ROOT MEAN SQUARE ROUGHNESS; TRANSPARENT CONDUCTIVE LAYER;

II-VI SEMICONDUCTORS;

EID: 47549114819     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2008.04.062     Document Type: Article

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