Toward generic fully integrated gate driver power supplies

IEEE Transactions on Power Electronics

Volumn 23, Issue 4, 2008, Pages 2106-2114

  Rouger, Nicholas ^a   Crebier, Jean Christophe ^a  

^a ENSIEG   (France)

Author keywords

Metal oxide semiconductor field effect transistor (MOSFET); Supply gate driver

Indexed keywords

AUTOMOBILE DRIVERS; CAPACITANCE; CAPACITORS; CHARGE COUPLED DEVICES; DIELECTRIC DEVICES; ELECTRIC CURRENTS; ELECTRIC EQUIPMENT; ELECTRIC POWER DISTRIBUTION; ELECTRIC POWER TRANSMISSION NETWORKS; ELECTRIC POWER UTILIZATION; FIELD EFFECT TRANSISTORS; METALLIC COMPOUNDS; METALS; MONOLITHIC INTEGRATED CIRCUITS; MOS DEVICES; MOSFET DEVICES; SEMICONDUCTOR MATERIALS;

DUTY CYCLE OPERATION; EFFICIENCY LEVELS; FULLY INTEGRATED; GATE DRIVERS; HIGH FREQUENCY OPERATIONS; LOW COST SOLUTION; LOW FREQUENCY OPERATION; METAL-OXIDE-SEMICONDUCTOR FIELD EFFECT TRANSISTOR (MOSFET); MONOLITHIC INTEGRATIONS; PARTICULAR SOLUTIONS; POWER SUPPLIES; POWER SWITCHING; POWER-ELECTRONIC CONVERTERS; SELF POWERING; STORAGE CAPACITORS; TIME DURATION;

ENERGY STORAGE;

EID: 47249134273     PISSN: 08858993     EISSN: None     Source Type: Journal    
DOI: 10.1109/TPEL.2008.924847     Document Type: Article

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