Stress dependence of paramagnetic point defects in amorphous silicon oxide

Journal of Physical Chemistry A

Volumn 112, Issue 17, 2008, Pages 3927-3934

  Leto, Andrea ^a   Munisso, M Chiara ^a   Porporati, A Alan ^a   Zhu, Wenliang ^a   Pezzotti, Giuseppe ^a  

^a KYOTO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

NONMETALS; OXYGEN; PARAMAGNETIC MATERIALS; POINT DEFECTS; SEMICONDUCTING SILICON COMPOUNDS; SILICA; SILICON; SILICON COMPOUNDS;

AMORPHOUS SILICON OXIDES; APPLIED STRESSES; CATHODOLUMINESCENCE (CL); NON BRIDGING OXYGEN HOLE CENTER (NBOHC); PARAMAGNETIC POINT DEFECTS; ROOM-TEMPERATURE (RT); STRESS DEPENDENCE;

AMORPHOUS SILICON;

EID: 47049098397     PISSN: 10895639     EISSN: None     Source Type: Journal    
DOI: 10.1021/jp710348v     Document Type: Article

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