Nickel ohmic contact on silicon carbide

Conference Proceedings - The 6th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM'06

Volumn , Issue , 2006, Pages 71-74

  Machac, P ^a   Barda, B ^a   Sajdl, P ^a  

^a INSTITUTE OF CHEMICAL TECHNOLOGY   (Czech Republic)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CONDUCTIVITY; MICROSYSTEMS; NICKEL; OHMIC CONTACTS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR MATERIALS; SEMICONDUCTOR SWITCHES; SILICON CARBIDE;

(100) SILICON; CONFERENCE PROCEEDINGS; CONTACT RESISTIVITIES; CONTACT STRUCTURES; INTERNATIONAL CONFERENCES;

SEMICONDUCTOR DEVICES;

EID: 46749131613     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ASDAM.2006.331156     Document Type: Conference Paper

References (10)

1. Y. S. Park: SiC materials and device. Semiconductors and Semimetals V62, Academia Press 1998.
2. B. Veisz, and B. Pecz: Appl. Surface Science 233, 360, 2004.
3. F. La Via, F. Roccaforte, A. Makhtari, V. Raineri, P. Musumeci, L. Calcagno: Microelectronic Engineering 60, 269, 2002.
4. R. Getto, J. Freytag, M. Kopnarski, and H. Oechsner: Materials Science and Engineering B270, 1999.
5. F. Roccaforte. F. La Via, V. Raineri, L. Calcagno., and Musumeci P.: Applied Surface Sci. 184, 295, 2001.
6. S.J. Yang, C.K. Kim, L.H. Noh, S.W. Jang, K.H. Jung, and N.I. Cho.: Diamond and Related Mat. 13, 1149, 2004.
7. B.K. Kim, J. Burm, and C An, in Proceedings of IEEE, 2002, p. 97.
8. T. Marinova., et al.: Material Science and Engineering. B46, 223, 1997.
9. B.K. Kim, J. Burm, and C An, in Proceedings of IEEE, 2002, p. 97.
10. B. Pecz: Applied Surface Science 184, 287, 2001.