Stress analysis of ZnO film with a GaN buffer layer on sapphire substrate

Chinese Physics Letters

Volumn 25, Issue 6, 2008, Pages 2277-2280

  Cui, Jun Peng ^a   Wang, Xiao Feng ^a   Duan, Yao ^a   He, Jin Xiao ^a   Zeng, Yi Ping ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

BUFFER LAYERS; CHEMICAL VAPOR DEPOSITION; FILM GROWTH; GALLIUM NITRIDE; II-VI SEMICONDUCTORS; III-V SEMICONDUCTORS; LATTICE MISMATCH; METALLIC FILMS; STRESS ANALYSIS; X RAY DIFFRACTION; ZINC OXIDE;

CHEMICAL VAPOUR DEPOSITION; CRYSTAL QUALITIES; FULL WIDTHS AT HALF MAXIMUMS; GAN BUFFER LAYERS; RAMAN SCATTERING MEASUREMENTS; ROCKING CURVES; SAPPHIRE SUBSTRATES; STRESSES ANALYSIS; VAPOR-DEPOSITION TECHNIQUES; ZNO FILMS;

SAPPHIRE;

EID: 46749108852     PISSN: 0256307X     EISSN: 17413540     Source Type: Journal    
DOI: 10.1088/0256-307X/25/6/097     Document Type: Article

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