FEM simulation and characterization of microcantilevers resonators

Conference Proceedings - The 6th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM'06

Volumn , Issue , 2006, Pages 267-270

  Narducci, Margarita S ^a   Figueras, Eduard ^a   García, Isabel ^a   Fonseca, Luís ^a   Cané, Carles ^a  

^a INSTITUTO DE MICROELECTRÓNICA DE BARCELONA   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CONDUCTIVITY; FINITE ELEMENT METHOD; MICROSYSTEMS; OPTICAL DESIGN; RESONANCE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR MATERIALS; SEMICONDUCTOR SWITCHES;

(+ MOD 2N) OPERATION; (2+1) DIMENSIONS; CHARACTERISATION; CONFERENCE PROCEEDINGS; DEVICE PERFORMANCES; FEM SIMULATIONS; FINITE ELEMENT ANALYSIS (FEA); INTERNATIONAL CONFERENCES; MICROCANTILEVERS (MC); QUALITY FACTOR (Q FACTOR); RESONANCE FREQUENCIES;

SEMICONDUCTOR DEVICES;

EID: 46749085594     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ASDAM.2006.331205     Document Type: Conference Paper

References (7)

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