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Applied Physics Letters

Volumn 92, Issue 26, 2008, Pages

Axially graded heteroepitaxy and Raman spectroscopic characterizations of Si1-xGex nanowires

(5) Yang, Jee Eun a Park, Won Hwa b Kim, Cheol Joo a Kim, Zee Hwan b Jo, Moon Ho a

a Pohang University of Science and Technology (POSTECH) (South Korea)

b Korea University (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; ELECTRIC WIRE; ELECTRON MICROSCOPES; EPITAXIAL GROWTH; GERMANIUM; NANOSTRUCTURED MATERIALS; NANOSTRUCTURES; NANOWIRES; RAMAN SPECTROSCOPY; STRUCTURE (COMPOSITION); SYNTHESIS (CHEMICAL);

AMERICAN INSTITUTE OF PHYSICS (AIP); CATALYTIC DECOMPOSITION; CHEMICAL VAPORS; HETERO-EPITAXY; INDIVIDUAL (PSS 544-7); KINETIC (POLYM.); LOCAL VARIATIONS; PHONON BANDS; RAMAN SPECTROSCOPIC; SPATIAL RESOLUTION (SR); TRANSMISSION ELECTRON MICROSCOPE (TEM);

SILICON;

EID: 46649096849 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.2939564 Document Type: Article

Times cited : (18)

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